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PD - 91564D
RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA)
Product Summary
Part Number Radiation Level IRHM7064 100K Rads (Si) IRHM3064 300K Rads (Si) IRHM4064 600K Rads (Si) IRHM8064 1000K Rads (Si)
IRHM7064 JANSR2N7431 60V, N-CHANNEL REF:MIL-PRF-19500/663
RAD Hard HEXFET TECHNOLOGY
(R)
RDS(on) QPL Part Number R DS(on) ID 0.021 35*A JANSR2N7431 0.021 35*A JANSF2N7431 0.021 35*A JANSG2N7431 0.021 35*A JANSH2N7431
TO-254AA
International Rectifiers RADHard ogy provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
HEXFET(R) technol-
Features:
! ! ! ! ! ! ! ! !
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page *Current is limited by pin diameter 35* 35 284 250 2.0 20 500 35 25 2.5 -55 to 150
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
300 ( 0.063 in.(1.6mm) from case for 10s) 9.3 (Typical )
g
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1
8/9/01
IRHM7064
Pre-Irradiation
@ Tj = 25C (Unless Otherwise Specified) Min
60 2.0 18
Electrical Characteristics
Parameter
Typ Max Units
0.056 6.8 0.021 4.0 25 250 100 -100 270 60 110 27 120 120 100 V V/C V S( ) A
Test Conditions
VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 35A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 35A VDS= 48V ,VGS=0V VDS = 48V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 35A VDS = 30V VDD =30V, ID = 35A VGS =12V, RG = 2.35
BVDSS Drain-to-Source Breakdown Voltage BV DSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
IGSS IGSS Qg Q gs Qgd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (Miller) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns nH
Measured from Drain lead (6mm /0.25in from package) to Source lead (6mm /0.25in. from
Package) with Source wires internally bonded from Source Pin to Drain Pad
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance

4900 2800 860

pF
VGS = 0V, VDS = 25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
35* 284 1.5 360 3.1
Test Conditions
A
V nS C Tj = 25C, IS = 35A, VGS = 0V Tj = 25C, IF = 35A, di/dt 100A/s VDD 50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
*Current is limited by pin diameter
Thermal Resistance
Parameter
R thJC RthJA RthCS Junction-to-Case Junction-to-Ambient Case-to-Sink
Min Typ Max Units
0.50 48 0.21
C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
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Radiation Characteristics Pre-Irradiation
IRHM7064
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation
Parameter
Min 60 2.0
100K Rads(Si)
Max
300 - 1000K Rads (Si)
Min
Max
Units Units V nA A V
Test Conditions
BVDSS V/5JD IGSS IGSS IDSS RDS(on) RDS(on) VSD
Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source" On-State Resistance (TO-3) Static Drain-to-Source" On-State Resistance (TO-254AA) Diode Forward Voltage"
4.0 100 -100 25 0.021 0.021 1.5
60 1.25
4.5 100 -100 50 0.031 0.031 1.5
VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS=48V, VGS =0V VGS = 12V, ID =35A VGS = 12V, ID =35A VGS = 0V, IS = 35A
1. Part numbers IRHM7064 2. Part number IRHM3064, IRHM4064 and IRHM8064
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion I Br LET MeV/(mg/cm )) 59.9 36.8 Energy Range VDS(V) (MeV) (m) GS=0V@ GS=-5V@ GS=-10V@ GS=-15V @VGS=-20V =0V@V =-5V@V =-10V@V @VGS=0V@VGS=-5V@VGS=-10V@VGS=-15V @VGS=-20V 345 32.8 60 60 45 40 30 305 39 40 35 30 25 20
80 60 VDS 40 20 0 0 -5 -10 VGS -15 -20
BR I
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHM7064
Pre-Irradiation
1000
I D , Drain-to-Source Current (A)
100
I D , Drain-to-Source Current (A)
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
1000
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
100
10 0.1
20s PULSE WIDTH 5.0V T = 25 C J
1 10 100
VDS , Drain-to-Source Voltage (V)
10 0.1
5.0V 20s PULSE WIDTH TJ = 150 C
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.5
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 79A
I D , Drain-to-Source Current (A)
2.0
TJ = 25 C
1.5
100
TJ = 150 C
1.0
0.5
10
V DS = 25V 20s PULSE WIDTH 5 6 7 8 9 10 11 12
0.0 -60 -40 -20
VGS = 12V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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Pre-Irradiation
IRHM7064
10000
8000
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = 35A VDS = 48V VDS = 30V VDS = 12V
16
C, Capacitance (pF)
6000
Ciss Coss
12
4000
8
2000
Crss
4
0
1
10
100
0
FOR TEST CIRCUIT SEE FIGURE 13
0 50 100 150 200 250
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
ISD , Reverse Drain Current (A)
TJ = 25 C TJ = 150 C
OPERATION IN THIS AREA LIMITED BY RDS(on)
100
ID , Drain Current (A)
100us
100
10
1ms
1 0.0
V GS = 0 V
1.0 2.0 3.0 4.0 5.0
10
TC = 25 C TJ = 150 C Single Pulse
1 10
10ms 100 1000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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5
IRHM7064
Pre-Irradiation
80
LIMITED BY PACKAGE
VDS VGS
RD
ID , Drain Current (A)
60
RG
D.U.T.
+
-VDD
VGS
40
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
20
VDS 90%
0 25 50 75 100 125 150
TC , Case Temperature ( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
1
Thermal Response (Z thJC )
0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 10
0.1
0.01
0.001 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Pre-Irradiation
IRHM7064
1400
EAS , Single Pulse Avalanche Energy (mJ)
15V
1200 1000 800 600 400 200 0
TOP BOTTOM
ID 16A 22A 35A
VDS
L
DRIVER
RG
D.U.T
IAS tp
+ - VDD
A
V/5 20V
0.01
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
V(BR)DSS tp
Starting TJ , Junction Temperature( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
12 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRHM7064
Pre-Irradiation
Foot Notes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = 25V, starting TJ = 25C, L=0.82mH Peak IL = 35A, VGS =12V ISD 35A, di/dt 220A/s, VDD 60V, TJ 150C
Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with V DS Bias. 48 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions TO-254AA
.12 ( .005 ) 3.78 ( .149 ) 3.53 ( .139 ) -A13.84 ( .545 ) 13.59 ( .535 ) 6.60 ( .260 ) 6.32 ( .249 ) -B1.27 ( .050 ) 1.02 ( .040 )
17.40 ( .685 ) 16.89 ( .665 ) 31.40 ( 1.235 ) 30.39 ( 1.199 ) 1 2 3
20.32 ( .800 ) 20.07 ( .790 )
13.84 ( .545 ) 13.59 ( .535 )
LEGEND 1 - COLL 2 - EMIT 3 - GATE
-C-
3.81 ( .150 ) 2X
3X
1.14 ( .045 ) 0.89 ( .035 ) .50 ( .020 ) .25 ( .010 ) M C AM B MC
3.81 ( .150 )
IRHM57163SED IRHM57163SEU
LEGEND 1- DRAIN 2- SOURCE 3- GATE
CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. . Data and specifications subject to change without notice. 08/01
8
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